Articles
ION-SENSITIVE FIELD EFFECT TRANSISTORS
Article number
304_12
Pages
113 – 126
Language
Abstract
Silicon based field effect transistors are currently being widely developed as the basic structural element in a new generation of chemical microsensors.
These so-called ion sensitive field effect transistors where first discussed in the literature by Prof.
Berg-veld (1970). Applications were primarily sought in the medical field, due to the specific advantages of the ISFETs over conventional measurement techniques: small size but still robust and a low impedance output signal.
Although the sensors are still not used in the medical field, due to biocompatability problems, the technical skills acquired over the years enable us now to envision applications in other fields such as environmental monitoring and process control e.g. horticulture.
In this review basic concepts, limitations and possibilities of these sensors will be discussed.
These so-called ion sensitive field effect transistors where first discussed in the literature by Prof.
Berg-veld (1970). Applications were primarily sought in the medical field, due to the specific advantages of the ISFETs over conventional measurement techniques: small size but still robust and a low impedance output signal.
Although the sensors are still not used in the medical field, due to biocompatability problems, the technical skills acquired over the years enable us now to envision applications in other fields such as environmental monitoring and process control e.g. horticulture.
In this review basic concepts, limitations and possibilities of these sensors will be discussed.
Authors
H.H. van den Vlekkert
Keywords
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